For the polarization confined within the volume of the electrode/organic interface then the off-state abruptly transits into the SCLC segment of the off-state curve that is followed by the steep unidentified current-density increase at the highest Ea to the intersection of both states. For Ea в‰€ EC the current-density behavior depends on the location of the ferroelectric polarization within the sample. Within the stated interval each off-state curve is described in terms of the linear Ea dependent Eint, which causes the polarization change. The polarization remains constant and small. The on-state current-density of each diode is within the interval of Ea up to the value of the coercive electric field, EC, represented by the space-charge limited current, SCLC, specified by Ea independent, values of Eint and Ојmax. Based on this relationship the published current-voltage measurements of two ferroelectric-like diode structures are examined. It explicitly depends on the externally applied electric field, Ea, on the electric field at the hole-injecting electrode/organic interface, Eint, and on the Ea independent intrinsic hole drift mobility, Ојmax. It was shown recently that the hole current-density is in organic semiconductor structures modulated by the hole drift mobility, Ојd.

Bf 311 transistor equivalent